Revisit the spin-FET: Multiple reflection, inelastic scattering, and lateral size effects

We revisit the spin-injected field effect transistor (spin-FET) in a framework of the lattice model by applying the recursive lattice Green's function approach. In the one-dimensional case the results of simulations in coherent regime reveal noticeable differences from the celebrated Datta-Das...

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Detalles Bibliográficos
Autores principales: Xu, Luting, Li, Xin-Qi, Sun, Qing-feng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5378946/
https://www.ncbi.nlm.nih.gov/pubmed/25516433
http://dx.doi.org/10.1038/srep07527

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5378946/
https://www.ncbi.nlm.nih.gov/pubmed/25516433
http://dx.doi.org/10.1038/srep07527

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