Revisit the spin-FET: Multiple reflection, inelastic scattering, and lateral size effects

We revisit the spin-injected field effect transistor (spin-FET) in a framework of the lattice model by applying the recursive lattice Green's function approach. In the one-dimensional case the results of simulations in coherent regime reveal noticeable differences from the celebrated Datta-Das...

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Detalles Bibliográficos
Autores principales: Xu, Luting, Li, Xin-Qi, Sun, Qing-feng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2014
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5378946/
https://www.ncbi.nlm.nih.gov/pubmed/25516433
http://dx.doi.org/10.1038/srep07527
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author Xu, Luting
Li, Xin-Qi
Sun, Qing-feng
author_facet Xu, Luting
Li, Xin-Qi
Sun, Qing-feng
author_sort Xu, Luting
collection PubMed
description We revisit the spin-injected field effect transistor (spin-FET) in a framework of the lattice model by applying the recursive lattice Green's function approach. In the one-dimensional case the results of simulations in coherent regime reveal noticeable differences from the celebrated Datta-Das model, which lead us to an improved treatment with generalized result. The simulations also allow us to address inelastic scattering and lateral confinement effects in the control of spins. These issues are very important in the spin-FET device.
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spelling pubmed-53789462017-04-05 Revisit the spin-FET: Multiple reflection, inelastic scattering, and lateral size effects Xu, Luting Li, Xin-Qi Sun, Qing-feng Sci Rep Article We revisit the spin-injected field effect transistor (spin-FET) in a framework of the lattice model by applying the recursive lattice Green's function approach. In the one-dimensional case the results of simulations in coherent regime reveal noticeable differences from the celebrated Datta-Das model, which lead us to an improved treatment with generalized result. The simulations also allow us to address inelastic scattering and lateral confinement effects in the control of spins. These issues are very important in the spin-FET device. Nature Publishing Group 2014-12-17 /pmc/articles/PMC5378946/ /pubmed/25516433 http://dx.doi.org/10.1038/srep07527 Text en Copyright © 2014, Macmillan Publishers Limited. All rights reserved http://creativecommons.org/licenses/by-nc-sa/4.0/ This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-sa/4.0/
spellingShingle Article
Xu, Luting
Li, Xin-Qi
Sun, Qing-feng
Revisit the spin-FET: Multiple reflection, inelastic scattering, and lateral size effects
title Revisit the spin-FET: Multiple reflection, inelastic scattering, and lateral size effects
title_full Revisit the spin-FET: Multiple reflection, inelastic scattering, and lateral size effects
title_fullStr Revisit the spin-FET: Multiple reflection, inelastic scattering, and lateral size effects
title_full_unstemmed Revisit the spin-FET: Multiple reflection, inelastic scattering, and lateral size effects
title_short Revisit the spin-FET: Multiple reflection, inelastic scattering, and lateral size effects
title_sort revisit the spin-fet: multiple reflection, inelastic scattering, and lateral size effects
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5378946/
https://www.ncbi.nlm.nih.gov/pubmed/25516433
http://dx.doi.org/10.1038/srep07527
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AT sunqingfeng revisitthespinfetmultiplereflectioninelasticscatteringandlateralsizeeffects

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