Tunable Wetting Property in Growth Mode-Controlled WS(2) Thin Films

We report on a thickness-dependent wetting property of WS(2)/Al(2)O(3) and WS(2)/SiO(2)/Si structures. We prepared WS(2) films with gradient thickness by annealing thickness-controlled WO(3) films at 800 °C in sulfur atmosphere. Raman spectroscopy measurements showed step-like variation in the thick...

Descripción completa

Detalles Bibliográficos
Autores principales: Choi, Byoung Ki, Lee, In Hak, Kim, Jiho, Chang, Young Jun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5383915/
https://www.ncbi.nlm.nih.gov/pubmed/28395480
http://dx.doi.org/10.1186/s11671-017-2030-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5383915/
https://www.ncbi.nlm.nih.gov/pubmed/28395480
http://dx.doi.org/10.1186/s11671-017-2030-z

Ejemplares similares