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Effects of Post-Deposition Annealing on ZrO(2)/n-GaN MOS Capacitors with H(2)O and O(3) as the Oxidizers
GaN-based metal-oxide-semiconductor capacitors with ZrO(2) as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from −4 to 4 V. Post-annealing results suggested that the capacitance in ac...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5388662/ https://www.ncbi.nlm.nih.gov/pubmed/28403582 http://dx.doi.org/10.1186/s11671-017-2024-x |