Effects of Post-Deposition Annealing on ZrO(2)/n-GaN MOS Capacitors with H(2)O and O(3) as the Oxidizers

GaN-based metal-oxide-semiconductor capacitors with ZrO(2) as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from −4 to 4 V. Post-annealing results suggested that the capacitance in ac...

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Autores principales: Zheng, Meijuan, Zhang, Guozhen, Wang, Xiao, Wan, Jiaxian, Wu, Hao, Liu, Chang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5388662/
https://www.ncbi.nlm.nih.gov/pubmed/28403582
http://dx.doi.org/10.1186/s11671-017-2024-x
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author Zheng, Meijuan
Zhang, Guozhen
Wang, Xiao
Wan, Jiaxian
Wu, Hao
Liu, Chang
author_facet Zheng, Meijuan
Zhang, Guozhen
Wang, Xiao
Wan, Jiaxian
Wu, Hao
Liu, Chang
author_sort Zheng, Meijuan
collection PubMed
description GaN-based metal-oxide-semiconductor capacitors with ZrO(2) as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from −4 to 4 V. Post-annealing results suggested that the capacitance in accumulation region went up gradually as the annealing temperature increased from 300 to 500 °C. A minimum leakage current density of 3 × 10(−9) A/cm(2) at 1 V was obtained when O(3) was used for the growth of ZrO(2). Leakage analysis revealed that Schottky emission and Fowler-Nordheim tunneling were the main leakage mechanisms.
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spelling pubmed-53886622017-04-27 Effects of Post-Deposition Annealing on ZrO(2)/n-GaN MOS Capacitors with H(2)O and O(3) as the Oxidizers Zheng, Meijuan Zhang, Guozhen Wang, Xiao Wan, Jiaxian Wu, Hao Liu, Chang Nanoscale Res Lett Nano Express GaN-based metal-oxide-semiconductor capacitors with ZrO(2) as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from −4 to 4 V. Post-annealing results suggested that the capacitance in accumulation region went up gradually as the annealing temperature increased from 300 to 500 °C. A minimum leakage current density of 3 × 10(−9) A/cm(2) at 1 V was obtained when O(3) was used for the growth of ZrO(2). Leakage analysis revealed that Schottky emission and Fowler-Nordheim tunneling were the main leakage mechanisms. Springer US 2017-04-11 /pmc/articles/PMC5388662/ /pubmed/28403582 http://dx.doi.org/10.1186/s11671-017-2024-x Text en © The Author(s). 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Zheng, Meijuan
Zhang, Guozhen
Wang, Xiao
Wan, Jiaxian
Wu, Hao
Liu, Chang
Effects of Post-Deposition Annealing on ZrO(2)/n-GaN MOS Capacitors with H(2)O and O(3) as the Oxidizers
title Effects of Post-Deposition Annealing on ZrO(2)/n-GaN MOS Capacitors with H(2)O and O(3) as the Oxidizers
title_full Effects of Post-Deposition Annealing on ZrO(2)/n-GaN MOS Capacitors with H(2)O and O(3) as the Oxidizers
title_fullStr Effects of Post-Deposition Annealing on ZrO(2)/n-GaN MOS Capacitors with H(2)O and O(3) as the Oxidizers
title_full_unstemmed Effects of Post-Deposition Annealing on ZrO(2)/n-GaN MOS Capacitors with H(2)O and O(3) as the Oxidizers
title_short Effects of Post-Deposition Annealing on ZrO(2)/n-GaN MOS Capacitors with H(2)O and O(3) as the Oxidizers
title_sort effects of post-deposition annealing on zro(2)/n-gan mos capacitors with h(2)o and o(3) as the oxidizers
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5388662/
https://www.ncbi.nlm.nih.gov/pubmed/28403582
http://dx.doi.org/10.1186/s11671-017-2024-x
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