Driving a GaAs film to a large-gap topological insulator by tensile strain

Search for materials with a large nontrivial band gap is quite crucial for the realization of the devices using quantum spin Hall (QSH) effects. From first-principles calculations combined with a tight-binding (TB) model, we demonstrate that a trivial GaAs film with atomic thickness can be driven to...

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Detalles Bibliográficos
Autores principales: Zhao, Mingwen, Chen, Xin, Li, Linyang, Zhang, Xiaoming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5389133/
https://www.ncbi.nlm.nih.gov/pubmed/25676173
http://dx.doi.org/10.1038/srep08441

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5389133/
https://www.ncbi.nlm.nih.gov/pubmed/25676173
http://dx.doi.org/10.1038/srep08441

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