Electrical and Photoelectrical Properties of Reduced Graphene Oxide—Porous Silicon Nanostructures

In this work, the hybrid structures were created by electrochemical etching of silicon wafer and deposition of reduced graphene oxide (RGO) on the porous silicon (PS) layer. With the help of SEM and AFM, the formation of hybrid PS–RGO structure was confirmed. By means of current–voltage characterist...

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Detalles Bibliográficos
Autores principales: Olenych, Igor B., Aksimentyeva, Olena I., Monastyrskii, Liubomyr S., Horbenko, Yulia Yu., Partyka, Maryan V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5391343/
https://www.ncbi.nlm.nih.gov/pubmed/28410550
http://dx.doi.org/10.1186/s11671-017-2043-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5391343/
https://www.ncbi.nlm.nih.gov/pubmed/28410550
http://dx.doi.org/10.1186/s11671-017-2043-7

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