Electronic Structure and Charge-Trapping Characteristics of the Al(2)O(3)-TiAlO-SiO(2) Gate Stack for Nonvolatile Memory Applications

In this work, high-k composite TiAlO film has been investigated as charge-trapping material for nonvolatile memory applications. The annealing formed Al(2)O(3)-TiAlO-SiO(2) dielectric stack demonstrates significant memory effects and excellent reliability properties. The memory device exhibits a lar...

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Detalles Bibliográficos
Autores principales: Xu, Wenchao, Zhang, Yang, Tang, Zhenjie, Shao, Zhengjie, Zhou, Guofu, Qin, Minghui, Zeng, Min, Wu, Sujuan, Zhang, Zhang, Gao, Jinwei, Lu, Xubing, Liu, Junming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5391346/
https://www.ncbi.nlm.nih.gov/pubmed/28410556
http://dx.doi.org/10.1186/s11671-017-2040-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5391346/
https://www.ncbi.nlm.nih.gov/pubmed/28410556
http://dx.doi.org/10.1186/s11671-017-2040-x

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