Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars

[Image: see text] The III–V semiconductor InGaAs is a key material for photonics because it provides optical emission and absorption in the 1.55 μm telecommunication wavelength window. However, InGaAs suffers from pronounced nonradiative effects associated with its surface states, which affect the p...

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Detalles Bibliográficos
Autores principales: Higuera-Rodriguez, A., Romeira, B., Birindelli, S., Black, L. E., Smalbrugge, E., van Veldhoven, P. J., Kessels, W. M. M., Smit, M. K., Fiore, A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5391499/
https://www.ncbi.nlm.nih.gov/pubmed/28340296
http://dx.doi.org/10.1021/acs.nanolett.7b00430

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5391499/
https://www.ncbi.nlm.nih.gov/pubmed/28340296
http://dx.doi.org/10.1021/acs.nanolett.7b00430

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