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Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars

[Image: see text] The III–V semiconductor InGaAs is a key material for photonics because it provides optical emission and absorption in the 1.55 μm telecommunication wavelength window. However, InGaAs suffers from pronounced nonradiative effects associated with its surface states, which affect the p...

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Autores principales: Higuera-Rodriguez, A., Romeira, B., Birindelli, S., Black, L. E., Smalbrugge, E., van Veldhoven, P. J., Kessels, W. M. M., Smit, M. K., Fiore, A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5391499/
https://www.ncbi.nlm.nih.gov/pubmed/28340296
http://dx.doi.org/10.1021/acs.nanolett.7b00430
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author Higuera-Rodriguez, A.
Romeira, B.
Birindelli, S.
Black, L. E.
Smalbrugge, E.
van Veldhoven, P. J.
Kessels, W. M. M.
Smit, M. K.
Fiore, A.
author_facet Higuera-Rodriguez, A.
Romeira, B.
Birindelli, S.
Black, L. E.
Smalbrugge, E.
van Veldhoven, P. J.
Kessels, W. M. M.
Smit, M. K.
Fiore, A.
author_sort Higuera-Rodriguez, A.
collection PubMed
description [Image: see text] The III–V semiconductor InGaAs is a key material for photonics because it provides optical emission and absorption in the 1.55 μm telecommunication wavelength window. However, InGaAs suffers from pronounced nonradiative effects associated with its surface states, which affect the performance of nanophotonic devices for optical interconnects, namely nanolasers and nanodetectors. This work reports the strong suppression of surface recombination of undoped InGaAs/InP nanostructured semiconductor pillars using a combination of ammonium sulfide, (NH(4))(2)S, chemical treatment and silicon oxide, SiO(x), coating. An 80-fold enhancement in the photoluminescence (PL) intensity of submicrometer pillars at a wavelength of 1550 nm is observed as compared with the unpassivated nanopillars. The PL decay time of ∼0.3 μm wide square nanopillars is dramatically increased from ∼100 ps to ∼25 ns after sulfur treatment and SiO(x) coating. The extremely long lifetimes reported here, to our knowledge the highest reported to date for undoped InGaAs nanostructures, are associated with a record-low surface recombination velocity of ∼260 cm/s. We also conclusively show that the SiO(x) capping layer plays an active role in the passivation. These results are crucial for the future development of high-performance nanoscale optoelectronic devices for applications in energy-efficient data optical links, single-photon sensing, and photovoltaics.
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spelling pubmed-53914992017-04-15 Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars Higuera-Rodriguez, A. Romeira, B. Birindelli, S. Black, L. E. Smalbrugge, E. van Veldhoven, P. J. Kessels, W. M. M. Smit, M. K. Fiore, A. Nano Lett [Image: see text] The III–V semiconductor InGaAs is a key material for photonics because it provides optical emission and absorption in the 1.55 μm telecommunication wavelength window. However, InGaAs suffers from pronounced nonradiative effects associated with its surface states, which affect the performance of nanophotonic devices for optical interconnects, namely nanolasers and nanodetectors. This work reports the strong suppression of surface recombination of undoped InGaAs/InP nanostructured semiconductor pillars using a combination of ammonium sulfide, (NH(4))(2)S, chemical treatment and silicon oxide, SiO(x), coating. An 80-fold enhancement in the photoluminescence (PL) intensity of submicrometer pillars at a wavelength of 1550 nm is observed as compared with the unpassivated nanopillars. The PL decay time of ∼0.3 μm wide square nanopillars is dramatically increased from ∼100 ps to ∼25 ns after sulfur treatment and SiO(x) coating. The extremely long lifetimes reported here, to our knowledge the highest reported to date for undoped InGaAs nanostructures, are associated with a record-low surface recombination velocity of ∼260 cm/s. We also conclusively show that the SiO(x) capping layer plays an active role in the passivation. These results are crucial for the future development of high-performance nanoscale optoelectronic devices for applications in energy-efficient data optical links, single-photon sensing, and photovoltaics. American Chemical Society 2017-03-24 2017-04-12 /pmc/articles/PMC5391499/ /pubmed/28340296 http://dx.doi.org/10.1021/acs.nanolett.7b00430 Text en Copyright © 2017 American Chemical Society This is an open access article published under a Creative Commons Non-Commercial No Derivative Works (CC-BY-NC-ND) Attribution License (http://pubs.acs.org/page/policy/authorchoice_ccbyncnd_termsofuse.html) , which permits copying and redistribution of the article, and creation of adaptations, all for non-commercial purposes.
spellingShingle Higuera-Rodriguez, A.
Romeira, B.
Birindelli, S.
Black, L. E.
Smalbrugge, E.
van Veldhoven, P. J.
Kessels, W. M. M.
Smit, M. K.
Fiore, A.
Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars
title Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars
title_full Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars
title_fullStr Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars
title_full_unstemmed Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars
title_short Ultralow Surface Recombination Velocity in Passivated InGaAs/InP Nanopillars
title_sort ultralow surface recombination velocity in passivated ingaas/inp nanopillars
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5391499/
https://www.ncbi.nlm.nih.gov/pubmed/28340296
http://dx.doi.org/10.1021/acs.nanolett.7b00430
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