Dynamic through-silicon-via filling process using copper electrochemical deposition at different current densities

This work demonstrates the dynamic through-silicon-via (TSV) filling process through staged electrodeposition experiments at different current densities. Different morphologies corresponding to TSV filling results can be obtained by controlling the applied current density. Specifically, a low curren...

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Detalles Bibliográficos
Autores principales: Wang, Fuliang, Zhao, Zhipeng, Nie, Nantian, Wang, Feng, Zhu, Wenhui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5395951/
https://www.ncbi.nlm.nih.gov/pubmed/28422170
http://dx.doi.org/10.1038/srep46639

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5395951/
https://www.ncbi.nlm.nih.gov/pubmed/28422170
http://dx.doi.org/10.1038/srep46639

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