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Dynamic through-silicon-via filling process using copper electrochemical deposition at different current densities
This work demonstrates the dynamic through-silicon-via (TSV) filling process through staged electrodeposition experiments at different current densities. Different morphologies corresponding to TSV filling results can be obtained by controlling the applied current density. Specifically, a low curren...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5395951/ https://www.ncbi.nlm.nih.gov/pubmed/28422170 http://dx.doi.org/10.1038/srep46639 |