Direct Growth of Al(2)O(3) on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition

Growing high-quality and uniform dielectric on black phosphorus is challenging since it is easy to react with O(2) or H(2)O in ambient. In this work, we have directly grown Al(2)O(3) on BP using plasma-enhanced atomic layer deposition (PEALD). The surface roughness of BP with covered Al(2)O(3) film...

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Detalles Bibliográficos
Autores principales: Wu, B. B., Zheng, H. M., Ding, Y. Q., Liu, W. J., Lu, H. L., Zhou, P., Chen, L., Sun, Q. Q., Ding, S. J., Zhang, David W.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5398975/
https://www.ncbi.nlm.nih.gov/pubmed/28431459
http://dx.doi.org/10.1186/s11671-017-2016-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5398975/
https://www.ncbi.nlm.nih.gov/pubmed/28431459
http://dx.doi.org/10.1186/s11671-017-2016-x

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