High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor

In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200( )°C. The THz responsivity and noise equivalent power (NEP) of the device were characterized at 0.14 THz rad...

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Detalles Bibliográficos
Autores principales: Hou, H. W., Liu, Z., Teng, J. H., Palacios, T., Chua, S. J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5399372/
https://www.ncbi.nlm.nih.gov/pubmed/28429745
http://dx.doi.org/10.1038/srep46664

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5399372/
https://www.ncbi.nlm.nih.gov/pubmed/28429745
http://dx.doi.org/10.1038/srep46664

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