Cargando…
High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor
In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200( )°C. The THz responsivity and noise equivalent power (NEP) of the device were characterized at 0.14 THz rad...
| Autores principales: | , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2017
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5399372/ https://www.ncbi.nlm.nih.gov/pubmed/28429745 http://dx.doi.org/10.1038/srep46664 |