AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N(2)-based plasma enhanced atomic layer deposition (PEALD) and shown a refractive index of 1.94 at 633 nm of wavelength. Prior to deposit AlN on III...

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Detalles Bibliográficos
Autores principales: Tzou, An-Jye, Chu, Kuo-Hsiung, Lin, I-Feng, Østreng, Erik, Fang, Yung-Sheng, Wu, Xiao-Peng, Wu, Bo-Wei, Shen, Chang-Hong, Shieh, Jia-Ming, Yeh, Wen-Kuan, Chang, Chun-Yen, Kuo, Hao-Chung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5407397/
https://www.ncbi.nlm.nih.gov/pubmed/28454481
http://dx.doi.org/10.1186/s11671-017-2082-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5407397/
https://www.ncbi.nlm.nih.gov/pubmed/28454481
http://dx.doi.org/10.1186/s11671-017-2082-0

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