Efficient Carrier Injection, Transport, Relaxation, and Recombination Associated with a Stronger Carrier Localization and a Low Polarization Effect of Nonpolar m-plane InGaN/GaN Light-Emitting Diodes

Based on time-resolved electroluminescence (TREL) measurement, more efficient carrier injection, transport, relaxation, and recombination associated with a stronger carrier localization and a low polarization effect in a nonpolar m-plane InGaN/GaN light emitting diode (m-LED), compared with those in...

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Detalles Bibliográficos
Autores principales: Yang, Fann-Wei, You, Yu-Siang, Feng, Shih-Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5407402/
https://www.ncbi.nlm.nih.gov/pubmed/28454483
http://dx.doi.org/10.1186/s11671-017-2087-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5407402/
https://www.ncbi.nlm.nih.gov/pubmed/28454483
http://dx.doi.org/10.1186/s11671-017-2087-8

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