High-Power Growth-Robust InGaAs/InAlAs Terahertz Quantum Cascade Lasers

[Image: see text] We report on high-power terahertz quantum cascade lasers based on low effective electron mass InGaAs/InAlAs semiconductor heterostructures with excellent reproducibility. Growth-related asymmetries in the form of interface roughness and dopant migration play a crucial role in this...

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Detalles Bibliográficos
Autores principales: Deutsch, Christoph, Kainz, Martin Alexander, Krall, Michael, Brandstetter, Martin, Bachmann, Dominic, Schönhuber, Sebastian, Detz, Hermann, Zederbauer, Tobias, MacFarland, Donald, Andrews, Aaron Maxwell, Schrenk, Werner, Beck, Mattias, Ohtani, Keita, Faist, Jérôme, Strasser, Gottfried, Unterrainer, Karl
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5407654/
https://www.ncbi.nlm.nih.gov/pubmed/28470028
http://dx.doi.org/10.1021/acsphotonics.7b00009

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5407654/
https://www.ncbi.nlm.nih.gov/pubmed/28470028
http://dx.doi.org/10.1021/acsphotonics.7b00009

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