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High-Power Growth-Robust InGaAs/InAlAs Terahertz Quantum Cascade Lasers

[Image: see text] We report on high-power terahertz quantum cascade lasers based on low effective electron mass InGaAs/InAlAs semiconductor heterostructures with excellent reproducibility. Growth-related asymmetries in the form of interface roughness and dopant migration play a crucial role in this...

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Detalles Bibliográficos
Autores principales: Deutsch, Christoph, Kainz, Martin Alexander, Krall, Michael, Brandstetter, Martin, Bachmann, Dominic, Schönhuber, Sebastian, Detz, Hermann, Zederbauer, Tobias, MacFarland, Donald, Andrews, Aaron Maxwell, Schrenk, Werner, Beck, Mattias, Ohtani, Keita, Faist, Jérôme, Strasser, Gottfried, Unterrainer, Karl
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2017
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5407654/
https://www.ncbi.nlm.nih.gov/pubmed/28470028
http://dx.doi.org/10.1021/acsphotonics.7b00009
Descripción
Sumario:[Image: see text] We report on high-power terahertz quantum cascade lasers based on low effective electron mass InGaAs/InAlAs semiconductor heterostructures with excellent reproducibility. Growth-related asymmetries in the form of interface roughness and dopant migration play a crucial role in this material system. These bias polarity dependent phenomena are studied using a nominally symmetric active region resulting in a preferential electron transport in the growth direction. A structure based on a three-well optical phonon depletion scheme was optimized for this bias direction. Depending on the sheet doping density, the performance of this structure shows a trade-off between high maximum operating temperature and high output power. While the highest operating temperature of 155 K is observed for a moderate sheet doping density of 2 × 10(10) cm(–2), the highest peak output power of 151 mW is found for 7.3 × 10(10) cm(–2). Furthermore, by abutting a hyperhemispherical GaAs lens to a device with the highest doping level a record output power of 587 mW is achieved for double-metal waveguide structures.