A new mechanism of voltage-dependent gating exposed by K(V)10.1 channels interrupted between voltage sensor and pore

Voltage-gated ion channels couple transmembrane potential changes to ion flow. Conformational changes in the voltage-sensing domain (VSD) of the channel are thought to be transmitted to the pore domain (PD) through an α-helical linker between them (S4–S5 linker). However, our recent work on channels...

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Detalles Bibliográficos
Autores principales: Tomczak, Adam P., Fernández-Trillo, Jorge, Bharill, Shashank, Papp, Ferenc, Panyi, Gyorgy, Stühmer, Walter, Isacoff, Ehud Y., Pardo, Luis A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Rockefeller University Press 2017
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5412533/
https://www.ncbi.nlm.nih.gov/pubmed/28360219
http://dx.doi.org/10.1085/jgp.201611742

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5412533/
https://www.ncbi.nlm.nih.gov/pubmed/28360219
http://dx.doi.org/10.1085/jgp.201611742

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