Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells

InGaN/GaN multiple quantum wells (MQWs) were grown with hydrogen treatment at well/barrier upper interface under different temperatures. Hydrogen treatment temperature greatly affects the characteristics of MQWs. Hydrogen treatment conducted at 850 °C improves surface and interface qualities of MQWs...

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Detalles Bibliográficos
Autores principales: Zhu, Yadan, Lu, Taiping, Zhou, Xiaorun, Zhao, Guangzhou, Dong, Hailiang, Jia, Zhigang, Liu, Xuguang, Xu, Bingshe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5413467/
https://www.ncbi.nlm.nih.gov/pubmed/28472870
http://dx.doi.org/10.1186/s11671-017-2109-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5413467/
https://www.ncbi.nlm.nih.gov/pubmed/28472870
http://dx.doi.org/10.1186/s11671-017-2109-6

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