Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers

We report quantum transport measurements on two dimensional (2D) Si:P and Ge:P δ-layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3–2.5 × 10(18) m(−2)) at low temperatures (0....

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Detalles Bibliográficos
Autores principales: Shamim, Saquib, Mahapatra, S., Scappucci, G., Klesse, W. M., Simmons, M. Y., Ghosh, Arindam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5415765/
https://www.ncbi.nlm.nih.gov/pubmed/28470166
http://dx.doi.org/10.1038/srep46670

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5415765/
https://www.ncbi.nlm.nih.gov/pubmed/28470166
http://dx.doi.org/10.1038/srep46670

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