Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers

We report quantum transport measurements on two dimensional (2D) Si:P and Ge:P δ-layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3–2.5 × 10(18) m(−2)) at low temperatures (0....

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Detalles Bibliográficos
Autores principales: Shamim, Saquib, Mahapatra, S., Scappucci, G., Klesse, W. M., Simmons, M. Y., Ghosh, Arindam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5415765/
https://www.ncbi.nlm.nih.gov/pubmed/28470166
http://dx.doi.org/10.1038/srep46670
Descripción
Sumario:We report quantum transport measurements on two dimensional (2D) Si:P and Ge:P δ-layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3–2.5 × 10(18) m(−2)) at low temperatures (0.3–4.2 K). The phase breaking rate extracted experimentally from measurements of WL correction to conductivity and UCF agree well with each other within the entire temperature range. This establishes that WL and UCF, being the outcome of quantum interference phenomena, are governed by the same dephasing rate.

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