Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers

We report quantum transport measurements on two dimensional (2D) Si:P and Ge:P δ-layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3–2.5 × 10(18) m(−2)) at low temperatures (0....

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Detalles Bibliográficos
Autores principales: Shamim, Saquib, Mahapatra, S., Scappucci, G., Klesse, W. M., Simmons, M. Y., Ghosh, Arindam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5415765/
https://www.ncbi.nlm.nih.gov/pubmed/28470166
http://dx.doi.org/10.1038/srep46670
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author Shamim, Saquib
Mahapatra, S.
Scappucci, G.
Klesse, W. M.
Simmons, M. Y.
Ghosh, Arindam
author_facet Shamim, Saquib
Mahapatra, S.
Scappucci, G.
Klesse, W. M.
Simmons, M. Y.
Ghosh, Arindam
author_sort Shamim, Saquib
collection PubMed
description We report quantum transport measurements on two dimensional (2D) Si:P and Ge:P δ-layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3–2.5 × 10(18) m(−2)) at low temperatures (0.3–4.2 K). The phase breaking rate extracted experimentally from measurements of WL correction to conductivity and UCF agree well with each other within the entire temperature range. This establishes that WL and UCF, being the outcome of quantum interference phenomena, are governed by the same dephasing rate.
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spelling pubmed-54157652017-05-04 Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers Shamim, Saquib Mahapatra, S. Scappucci, G. Klesse, W. M. Simmons, M. Y. Ghosh, Arindam Sci Rep Article We report quantum transport measurements on two dimensional (2D) Si:P and Ge:P δ-layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3–2.5 × 10(18) m(−2)) at low temperatures (0.3–4.2 K). The phase breaking rate extracted experimentally from measurements of WL correction to conductivity and UCF agree well with each other within the entire temperature range. This establishes that WL and UCF, being the outcome of quantum interference phenomena, are governed by the same dephasing rate. Nature Publishing Group 2017-05-04 /pmc/articles/PMC5415765/ /pubmed/28470166 http://dx.doi.org/10.1038/srep46670 Text en Copyright © 2017, The Author(s) http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Shamim, Saquib
Mahapatra, S.
Scappucci, G.
Klesse, W. M.
Simmons, M. Y.
Ghosh, Arindam
Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers
title Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers
title_full Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers
title_fullStr Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers
title_full_unstemmed Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers
title_short Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers
title_sort dephasing rates for weak localization and universal conductance fluctuations in two dimensional si:p and ge:p δ-layers
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5415765/
https://www.ncbi.nlm.nih.gov/pubmed/28470166
http://dx.doi.org/10.1038/srep46670
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