Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures

Optical and photoelectric properties of metamorphic InAs/InGaAs and conventional pseudomorphic InAs/GaAs quantum dot (QD) structures were studied. We used two different electrical contact configurations that allowed us to have the current flow (i) only through QDs and embedding layers and (ii) throu...

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Detalles Bibliográficos
Autores principales: Golovynskyi, Sergii, Seravalli, Luca, Datsenko, Oleksandr, Trevisi, Giovanna, Frigeri, Paola, Gombia, Enos, Golovynska, Iuliia, Kondratenko, Serhiy V., Qu, Junle, Ohulchanskyy, Tymish Y.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5419954/
https://www.ncbi.nlm.nih.gov/pubmed/28482647
http://dx.doi.org/10.1186/s11671-017-2091-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5419954/
https://www.ncbi.nlm.nih.gov/pubmed/28482647
http://dx.doi.org/10.1186/s11671-017-2091-z

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