Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition

X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO(2) and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InP(x)O(y) layer is easily formed at the HfO(2)/InP interf...

Descripción completa

Detalles Bibliográficos
Autores principales: Yang, Lifeng, Wang, Tao, Zou, Ying, Lu, Hong-Liang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5422219/
https://www.ncbi.nlm.nih.gov/pubmed/28486796
http://dx.doi.org/10.1186/s11671-017-2104-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5422219/
https://www.ncbi.nlm.nih.gov/pubmed/28486796
http://dx.doi.org/10.1186/s11671-017-2104-y

Ejemplares similares