Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al(2)O(3)/GaN MOS Device

Conductance method was employed to study the physics of traps (e.g., interface and bulk traps) in the Al(2)O(3)/GaN MOS devices. By featuring only one single peak in the parallel conductance (G (p)/ω) characteristics in the deep depletion region, one single-level bulk trap (E (C)-0.53 eV) uniformly...

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Detalles Bibliográficos
Autores principales: Shi, Yuanyuan, Zhou, Qi, Zhang, Anbang, Zhu, Liyang, Shi, Yu, Chen, Wanjun, Li, Zhaoji, Zhang, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5423875/
https://www.ncbi.nlm.nih.gov/pubmed/28494570
http://dx.doi.org/10.1186/s11671-017-2111-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5423875/
https://www.ncbi.nlm.nih.gov/pubmed/28494570
http://dx.doi.org/10.1186/s11671-017-2111-z

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