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Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al(2)O(3)/GaN MOS Device
Conductance method was employed to study the physics of traps (e.g., interface and bulk traps) in the Al(2)O(3)/GaN MOS devices. By featuring only one single peak in the parallel conductance (G (p)/ω) characteristics in the deep depletion region, one single-level bulk trap (E (C)-0.53 eV) uniformly...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5423875/ https://www.ncbi.nlm.nih.gov/pubmed/28494570 http://dx.doi.org/10.1186/s11671-017-2111-z |