A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursued approaches to achieve such a subthermioni...

Descripción completa

Detalles Bibliográficos
Autores principales: Vitale, Wolfgang A., Casu, Emanuele A., Biswas, Arnab, Rosca, Teodor, Alper, Cem, Krammer, Anna, Luong, Gia V., Zhao, Qing-T., Mantl, Siegfried, Schüler, Andreas, Ionescu, A. M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5428222/
https://www.ncbi.nlm.nih.gov/pubmed/28336970
http://dx.doi.org/10.1038/s41598-017-00359-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5428222/
https://www.ncbi.nlm.nih.gov/pubmed/28336970
http://dx.doi.org/10.1038/s41598-017-00359-6

Ejemplares similares