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A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursued approaches to achieve such a subthermioni...

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Detalles Bibliográficos
Autores principales:	Vitale, Wolfgang A., Casu, Emanuele A., Biswas, Arnab, Rosca, Teodor, Alper, Cem, Krammer, Anna, Luong, Gia V., Zhao, Qing-T., Mantl, Siegfried, Schüler, Andreas, Ionescu, A. M.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5428222/ https://www.ncbi.nlm.nih.gov/pubmed/28336970 http://dx.doi.org/10.1038/s41598-017-00359-6

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