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Time-decay Memristive Behavior and diffusive dynamics in one forget process operated by a 3D vertical Pt/Ta(2)O(5−x)/W device
A time-decay resistive switching memory using a 3D vertical Pt/Ta(2)O(5−x)/W device architecture is demonstrated, in which horizontal W electrodes were fabricated, and vertical Pt electrodes was formed at the sidewall after oxide was deposited. Unlike conventional resistive switching, which usually...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2017
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5429752/ https://www.ncbi.nlm.nih.gov/pubmed/28400573 http://dx.doi.org/10.1038/s41598-017-00985-0 |