Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thick BN layers were grown on 2-inch sapphire substrates by metal-organic vapor phase epitaxy...

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Detalles Bibliográficos
Autores principales: Li, Xin, Jordan, Matthew B., Ayari, Taha, Sundaram, Suresh, El Gmili, Youssef, Alam, Saiful, Alam, Muhbub, Patriarche, Gilles, Voss, Paul L., Paul Salvestrini, Jean, Ougazzaden, Abdallah
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5429783/
https://www.ncbi.nlm.nih.gov/pubmed/28400555
http://dx.doi.org/10.1038/s41598-017-00865-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5429783/
https://www.ncbi.nlm.nih.gov/pubmed/28400555
http://dx.doi.org/10.1038/s41598-017-00865-7

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