Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition

Metallic channel transistors have been proposed as the candidate for sub-10 nm technology node. However, the conductivity modulation in metallic channels can only be observed at low temperatures usually below 100 K. In this study, room-temperature field effect and modulation of the channel resistanc...

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Detalles Bibliográficos
Autores principales: Cheng, Po-Hsien, Wang, Chun-Yuan, Chang, Teng-Jan, Shen, Tsung-Han, Cai, Yu-Syuan, Chen, Miin-Jang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5429830/
https://www.ncbi.nlm.nih.gov/pubmed/28408744
http://dx.doi.org/10.1038/s41598-017-00986-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5429830/
https://www.ncbi.nlm.nih.gov/pubmed/28408744
http://dx.doi.org/10.1038/s41598-017-00986-z

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