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Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition

Metallic channel transistors have been proposed as the candidate for sub-10 nm technology node. However, the conductivity modulation in metallic channels can only be observed at low temperatures usually below 100 K. In this study, room-temperature field effect and modulation of the channel resistanc...

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Detalles Bibliográficos
Autores principales:	Cheng, Po-Hsien, Wang, Chun-Yuan, Chang, Teng-Jan, Shen, Tsung-Han, Cai, Yu-Syuan, Chen, Miin-Jang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5429830/ https://www.ncbi.nlm.nih.gov/pubmed/28408744 http://dx.doi.org/10.1038/s41598-017-00986-z

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