Cargando…
Room-temperature field effect transistors with metallic ultrathin TiN-based channel prepared by atomic layer delta doping and deposition
Metallic channel transistors have been proposed as the candidate for sub-10 nm technology node. However, the conductivity modulation in metallic channels can only be observed at low temperatures usually below 100 K. In this study, room-temperature field effect and modulation of the channel resistanc...
Autores principales: | Cheng, Po-Hsien, Wang, Chun-Yuan, Chang, Teng-Jan, Shen, Tsung-Han, Cai, Yu-Syuan, Chen, Miin-Jang |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5429830/ https://www.ncbi.nlm.nih.gov/pubmed/28408744 http://dx.doi.org/10.1038/s41598-017-00986-z |
Ejemplares similares
-
Plasma Enhanced Atomic Layer Deposition of Plasmonic TiN Ultrathin Films Using TDMATi and NH(3)
por: Hansen, Katherine, et al.
Publicado: (2020) -
Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination.
por: Büschges, M. Isabelle, et al.
Publicado: (2021) -
Parameter
Space of Atomic Layer Deposition of Ultrathin Oxides on Graphene
por: Aria, Adrianus I., et al.
Publicado: (2016) -
The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition
por: Ding, Xingwei, et al.
Publicado: (2017) -
Effect of annealing treatments on CeO(2) grown on TiN and Si substrates by atomic layer deposition
por: Vangelista, Silvia, et al.
Publicado: (2018)