Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size

Phosphorus doping of silicon nanostructures is a non-trivial task due to problems with confinement, self-purification and statistics of small numbers. Although P-atoms incorporated in Si nanostructures influence their optical and electrical properties, the existence of free majority carriers, as req...

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Detalles Bibliográficos
Autores principales: Hiller, Daniel, López-Vidrier, Julian, Gutsch, Sebastian, Zacharias, Margit, Nomoto, Keita, König, Dirk
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5429832/
https://www.ncbi.nlm.nih.gov/pubmed/28408757
http://dx.doi.org/10.1038/s41598-017-01001-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5429832/
https://www.ncbi.nlm.nih.gov/pubmed/28408757
http://dx.doi.org/10.1038/s41598-017-01001-1

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