Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor

III-V semiconductors have been intensively studied with the goal of realizing metal-oxide-semiconductor field-effect transistors (MOSFETs) with high mobility, a high on-off ratio, and low power consumption as next-generation transistors designed to replace current Si technology. Of these semiconduct...

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Detalles Bibliográficos
Autores principales: Takase, K., Ashikawa, Y., Zhang, G., Tateno, K., Sasaki, S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5430424/
https://www.ncbi.nlm.nih.gov/pubmed/28424473
http://dx.doi.org/10.1038/s41598-017-01080-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5430424/
https://www.ncbi.nlm.nih.gov/pubmed/28424473
http://dx.doi.org/10.1038/s41598-017-01080-0

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