Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys

The present work displays a route to design strain gradients at the interface between substrate and van der Waals bonded materials. The latter are expected to grow decoupled from the substrates and fully relaxed and thus, by definition, incompatible with conventional strain engineering. By the usage...

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Detalles Bibliográficos
Autores principales: Zallo, Eugenio, Cecchi, Stefano, Boschker, Jos E., Mio, Antonio M., Arciprete, Fabrizio, Privitera, Stefania, Calarco, Raffaella
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5431103/
https://www.ncbi.nlm.nih.gov/pubmed/28469258
http://dx.doi.org/10.1038/s41598-017-01502-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5431103/
https://www.ncbi.nlm.nih.gov/pubmed/28469258
http://dx.doi.org/10.1038/s41598-017-01502-z

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