Epitaxial growth of Cu(001) thin films onto Si(001) using a single-step HiPIMS process

We report on a new route to grow epitaxial copper (Cu) ultra-thin films (up to 150 nm thick) at ambient temperature on Si(001) wafers covered with native oxide without any prior chemical etching or plasma cleaning of the substrate. It consists of a single-step deposition process using high power imp...

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Detalles Bibliográficos
Autores principales: Cemin, Felipe, Lundin, Daniel, Furgeaud, Clarisse, Michel, Anny, Amiard, Guillaume, Minea, Tiberiu, Abadias, Gregory
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5431785/
https://www.ncbi.nlm.nih.gov/pubmed/28490804
http://dx.doi.org/10.1038/s41598-017-01755-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5431785/
https://www.ncbi.nlm.nih.gov/pubmed/28490804
http://dx.doi.org/10.1038/s41598-017-01755-8

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