Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N(2)/H(2)-Grown GaN Barrier

Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H(2)) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H(2) etching effect are found to be the main affecting factors o...

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Detalles Bibliográficos
Autores principales: Zhou, Xiaorun, Lu, Taiping, Zhu, Yadan, Zhao, Guangzhou, Dong, Hailiang, Jia, Zhigang, Yang, Yongzhen, Chen, Yongkang, Xu, Bingshe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5433960/
https://www.ncbi.nlm.nih.gov/pubmed/28511535
http://dx.doi.org/10.1186/s11671-017-2115-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5433960/
https://www.ncbi.nlm.nih.gov/pubmed/28511535
http://dx.doi.org/10.1186/s11671-017-2115-8

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