Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

As promising candidates for solar cell and photodetection applications in the range 1.0–1.16 eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this aim, we have taken advantage of the temperature gradient in the molecular beam epitaxy reactor to analyse the imp...

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Detalles Bibliográficos
Autores principales: Braza, V., Reyes, D. F., Gonzalo, A., Utrilla, A. D., Ben, T., Ulloa, J. M., González, D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5437000/
https://www.ncbi.nlm.nih.gov/pubmed/28525952
http://dx.doi.org/10.1186/s11671-017-2129-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5437000/
https://www.ncbi.nlm.nih.gov/pubmed/28525952
http://dx.doi.org/10.1186/s11671-017-2129-2

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