Cargando…

Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

As promising candidates for solar cell and photodetection applications in the range 1.0–1.16 eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this aim, we have taken advantage of the temperature gradient in the molecular beam epitaxy reactor to analyse the imp...

Descripción completa

Detalles Bibliográficos
Autores principales:	Braza, V., Reyes, D. F., Gonzalo, A., Utrilla, A. D., Ben, T., Ulloa, J. M., González, D.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2017
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5437000/ https://www.ncbi.nlm.nih.gov/pubmed/28525952 http://dx.doi.org/10.1186/s11671-017-2129-2

Ejemplares similares

Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires
por: Kasanaboina, Pavan, et al.
Publicado: (2016)

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer
por: Utrilla, Antonio D, et al.
Publicado: (2014)

Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots
por: Reyes, Daniel F, et al.
Publicado: (2012)

Control of Nitrogen Inhomogeneities in Type-I and Type-II GaAsSbN Superlattices for Solar Cell Devices
por: Ruiz, Nazaret, et al.
Publicado: (2019)

Study of patterned GaAsSbN nanowires using sigmoidal model
por: Johnson, Sean, et al.
Publicado: (2021)

Identification of the Segregation Kinetics of Ultrathin GaAsSb/GaAs Films Using AlAs Markers
por: Gonzalez, David, et al.
Publicado: (2023)

Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components
por: Li, Haolin, et al.
Publicado: (2019)

Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy
por: Gao, Xian, et al.
Publicado: (2016)

Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs
por: Sadofyev, Yuri G., et al.
Publicado: (2010)

Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures
por: Shi, Suixing, et al.
Publicado: (2015)

Lattice location of Mn in GaAs and GaN
por: De Coster, Arnaud
Publicado: (2015)

Lattice location of Mn in GaAs and GaN
por: De Coster, Arnaud
Publicado: (2017)

Study of a Gate-Engineered Vertical TFET with GaSb/GaAs(0.5)Sb(0.5) Heterojunction
por: Xie, Haiwu, et al.
Publicado: (2021)

Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers
por: Loeber, Thomas H, et al.
Publicado: (2011)

Metamorphic Integration of GaInAsSb Material on GaAs Substrates for Light Emitting Device Applications
por: Lu, Qi, et al.
Publicado: (2019)

Structural and compositional analysis of (InGa)(AsSb)/GaAs/GaP Stranski–Krastanov quantum dots
por: Gajjela, Raja S. R., et al.
Publicado: (2021)

Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers
por: Ohtake, Akihiro, et al.
Publicado: (2018)

Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots
por: Dai, Liping, et al.
Publicado: (2014)

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
por: Benyahia, D., et al.
Publicado: (2018)

Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)
por: Xu, Pengfa, et al.
Publicado: (2011)

GaAs epilayers grown on patterned (001) silicon substrates via suspended Ge layers
por: Ballabio, Andrea, et al.
Publicado: (2019)

Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires
por: Luo, Ning, et al.
Publicado: (2016)

Photo-induced Doping in GaN Epilayers with Graphene Quantum Dots
por: Lin, T. N., et al.
Publicado: (2016)

Photoluminescence quantum efficiency of Er optical centers in GaN epilayers
por: Ho, V. X., et al.
Publicado: (2017)

Doping Dependent Magnetic Behavior in MBE Grown GaAs(1-x)Sb(x) Nanowires
por: Kumar, Raj, et al.
Publicado: (2020)

Raman scattering study on Sb spray InAs/GaAs quantum dot nanostructure systems
por: Dai, Liping, et al.
Publicado: (2015)

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations
por: Jallipalli, A, et al.
Publicado: (2009)

Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material
por: Lin, Hsiang-Ting, et al.
Publicado: (2020)

Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station
por: Nirmal Kumar, Velu, et al.
Publicado: (2016)

AlGaN/GaN FETs looms over GaAs technology
Publicado: (2003)

Ensemble GaAsSb/GaAs axial configured nanowire-based separate absorption, charge, and multiplication avalanche near-infrared photodetectors
por: Parakh, M., et al.
Publicado: (2022)

Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates
por: Lin, Meng-Hung, et al.
Publicado: (2010)

Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform
por: Kwan, D. C. M., et al.
Publicado: (2022)

Optical Properties of GaSb Nanofibers
por: Zhou, Xiuli, et al.
Publicado: (2010)

Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs)
por: Ikyo, A. B., et al.
Publicado: (2016)

Lattice dynamics and carrier recombination in GaAs/GaAsBi nanowires
por: Jansson, M., et al.
Publicado: (2023)

Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice
por: Li, Jiakai, et al.
Publicado: (2021)

Carrier dynamics in (Ga,In)(Sb,Bi)/GaSb quantum wells for laser applications in the mid-infrared spectral range
por: Rogowicz, E., et al.
Publicado: (2022)

Degradation Mechanisms for GaN and GaAs High Speed Transistors
por: Cheney, David J., et al.
Publicado: (2012)

Optical characteristics of type-II hexagonal-shaped GaSb quantum dots on GaAs synthesized using nanowire self-growth mechanism from Ga metal droplet
por: Baik, Min, et al.
Publicado: (2021)

Cannot write session to /tmp/vufind_sessions/sess_sc8kuq9lf8cjo7cimjpr65eb0c