The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties

Zinc oxynitride (ZnON) semiconductors are suitable for high performance thin-film transistors (TFTs) with excellent device stability under negative bias illumination stress (NBIS). The present work provides a first approach on the optimization of electrical performance and stability of the TFTs via...

Descripción completa

Detalles Bibliográficos
Autores principales: Park, Jozeph, Jeong, Hyun-Jun, Lee, Hyun-Mo, Nahm, Ho-Hyun, Park, Jin-Seong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5437099/
https://www.ncbi.nlm.nih.gov/pubmed/28522801
http://dx.doi.org/10.1038/s41598-017-02336-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5437099/
https://www.ncbi.nlm.nih.gov/pubmed/28522801
http://dx.doi.org/10.1038/s41598-017-02336-5

Ejemplares similares