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The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties
Zinc oxynitride (ZnON) semiconductors are suitable for high performance thin-film transistors (TFTs) with excellent device stability under negative bias illumination stress (NBIS). The present work provides a first approach on the optimization of electrical performance and stability of the TFTs via...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5437099/ https://www.ncbi.nlm.nih.gov/pubmed/28522801 http://dx.doi.org/10.1038/s41598-017-02336-5 |