Origin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealing

Changes of the defect structure of silicon p-type crystal surface layer under the influence of plastic deformation and high temperature annealing in oxygen atmosphere were investigated by deep-level capacitance-modulation spectroscopy (DLCMS) and IR spectroscopy of molecules and atom vibrational lev...

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Detalles Bibliográficos
Autores principales: Pavlyk, Bohdan, Kushlyk, Markiyan, Slobodzyan, Dmytro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5438322/
https://www.ncbi.nlm.nih.gov/pubmed/28532123
http://dx.doi.org/10.1186/s11671-017-2133-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5438322/
https://www.ncbi.nlm.nih.gov/pubmed/28532123
http://dx.doi.org/10.1186/s11671-017-2133-6

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