Band Offset Measurements in Atomic-Layer-Deposited Al(2)O(3)/Zn(0.8)Al(0.2)O Heterojunction Studied by X-ray Photoelectron Spectroscopy

Pure aluminum oxide (Al(2)O(3)) and zinc aluminum oxide (Zn(x)Al(1-x)O) thin films were deposited by atomic layer deposition (ALD). The microstructure and optical band gaps (E (g)) of the Zn(x)Al(1-x)O (0.2 ≤ x ≤ 1) films were studied by X-ray diffractometer and Tauc method. The band offsets and ali...

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Detalles Bibliográficos
Autores principales: Yan, Baojun, Liu, Shulin, Heng, Yuekun, Yang, Yuzhen, Yu, Yang, Wen, Kaile
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5438334/
https://www.ncbi.nlm.nih.gov/pubmed/28532128
http://dx.doi.org/10.1186/s11671-017-2131-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5438334/
https://www.ncbi.nlm.nih.gov/pubmed/28532128
http://dx.doi.org/10.1186/s11671-017-2131-8

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