Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating

The atomic-layer (AL) doping technique in epitaxy has attracted attention as a low-resistive ultrathin semiconductor film as well as a two-dimensional (2-D) carrier transport system. In this paper, we report carrier properties for B AL-doped Si films with suppressed thermal diffusion. B AL-doped Si...

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Detalles Bibliográficos
Autores principales: Sakuraba, Masao, Sugawara, Katsutoshi, Nosaka, Takayuki, Akima, Hisanao, Sato, Shigeo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Taylor & Francis 2017
Materias:
Optical, Magnetic and Electronic Device Materials
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5439406/
https://www.ncbi.nlm.nih.gov/pubmed/28567175
http://dx.doi.org/10.1080/14686996.2017.1312520

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5439406/
https://www.ncbi.nlm.nih.gov/pubmed/28567175
http://dx.doi.org/10.1080/14686996.2017.1312520

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