Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applications in non-destructive readout non-volatile memories. Using a semiconductor electrode has been proven effective to enhance the tunnelling electroresistance in ferroelectric tunnel junctions. Here w...

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Detalles Bibliográficos
Autores principales: Xi, Zhongnan, Ruan, Jieji, Li, Chen, Zheng, Chunyan, Wen, Zheng, Dai, Jiyan, Li, Aidong, Wu, Di
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5442322/
https://www.ncbi.nlm.nih.gov/pubmed/28513590
http://dx.doi.org/10.1038/ncomms15217

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5442322/
https://www.ncbi.nlm.nih.gov/pubmed/28513590
http://dx.doi.org/10.1038/ncomms15217

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