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Interfacial, Electrical, and Band Alignment Characteristics of HfO(2)/Ge Stacks with In Situ-Formed SiO(2) Interlayer by Plasma-Enhanced Atomic Layer Deposition
In situ-formed SiO(2) was introduced into HfO(2) gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO(2)/SiO(2) high-k gate dielectric stacks on Ge have been well investigated. It...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5445033/ https://www.ncbi.nlm.nih.gov/pubmed/28549375 http://dx.doi.org/10.1186/s11671-017-2083-z |