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Interfacial, Electrical, and Band Alignment Characteristics of HfO(2)/Ge Stacks with In Situ-Formed SiO(2) Interlayer by Plasma-Enhanced Atomic Layer Deposition

In situ-formed SiO(2) was introduced into HfO(2) gate dielectrics on Ge substrate as interlayer by plasma-enhanced atomic layer deposition (PEALD). The interfacial, electrical, and band alignment characteristics of the HfO(2)/SiO(2) high-k gate dielectric stacks on Ge have been well investigated. It...

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Detalles Bibliográficos
Autores principales:	Cao, Yan-Qiang, Wu, Bing, Wu, Di, Li, Ai-Dong
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2017
Materias:	Nano Express
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5445033/ https://www.ncbi.nlm.nih.gov/pubmed/28549375 http://dx.doi.org/10.1186/s11671-017-2083-z

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