High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide

The high-frequency performance of transistors is usually assessed by speed and gain figures of merit, such as the maximum oscillation frequency f (max), cutoff frequency f (T), ratio f (max)/f (T), forward transmission coefficient S (21), and open-circuit voltage gain A (v). All these figures of mer...

Descripción completa

Detalles Bibliográficos
Autores principales: Guerriero, Erica, Pedrinazzi, Paolo, Mansouri, Aida, Habibpour, Omid, Winters, Michael, Rorsman, Niklas, Behnam, Ashkan, Carrion, Enrique A., Pesquera, Amaia, Centeno, Alba, Zurutuza, Amaia, Pop, Eric, Zirath, Herbert, Sordan, Roman
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5445082/
https://www.ncbi.nlm.nih.gov/pubmed/28546634
http://dx.doi.org/10.1038/s41598-017-02541-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5445082/
https://www.ncbi.nlm.nih.gov/pubmed/28546634
http://dx.doi.org/10.1038/s41598-017-02541-2

Ejemplares similares